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FDS9926A
July 2003
FDS9926A
Dual N-Channel 2.5V Specified PowerTrench(R) MOSFET
General Description
These N-Channel 2.5V specified MOSFETs use Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V - 10V). Features 6.5 A, 20 V. RDS(ON) = 30 m @ VGS = 4.5 V RDS(ON) = 43 m @ VGS = 2.5 V.
* Optimized for use in battery protection circuits * Low gate charge
Applications
* Battery protection * Load switch * Power management
5 6 7 8
Q2 Q1
4 3 2 1
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
TA=25oC unless otherwise noted
Parameter
Ratings
20 10
(Note 1a)
Units
V A W
6.5 20 2
Power Dissipation for Dual Operation Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
1.6 1 0.9 -55 to +150 C
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
78 40
C/W
Package Marking and Ordering Information
Device Marking FDS9926A Device FDS9926A Reel Size 13'' Tape width 12mm Quantity 2500 units
(c)2003 Fairchild Semiconductor Corp.
FDS9926A Rev E (W)
FDS9926A
Electrical Characteristics
Symbol
BVDSS BVDSS TJ IDSS IGSS
TA = 25C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage
(Note 2)
Test Conditions
VGS = 0 V, ID = 250 A
Min
20
Typ Max Units
V 14 1 100 mV/C A nA
Off Characteristics
ID = 250 A, Referenced to 25C VDS = 16 V, VGS = 8 V, VGS = 0 V VDS = 0 V ID = 250 A
On Characteristics
VGS(th) VGS(th) TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance
VDS = VGS,
0.6
1 -3 25 35 35
1.5
V mV/C
ID = 250 A, Referenced to 25C VGS = 4.5 V, ID = 6.5 A VGS = 2.5 V, ID = 5.4 A VGS = 4.5 V, ID =6.5A, TJ=125C VGS = 4.5 V, VDS = 5 V, VDS = 5 V ID = 6.5 A 15
30 43 50
m
ID(on) gFS
A 22 S
Dynamic Characteristics
Ciss Coss Crss RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
(Note 2)
VDS = 10 V, f = 1.0 MHz
V GS = 0 V,
650 150 85 1.4
pF pF pF
V GS = 15 mV, f = 1.0 MHz
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd VSD trr Qrr Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDD = 10 V, ID = 1 A, VGS = 4.5 V, RGEN = 6
8 9 15 4
16 17 26 9 9
ns ns ns ns nC nC nC
VDS = 10 V, VGS = 4.5 V
ID = 3 A,
6.2 1.2 1.7
Drain-Source Diode Characteristics and Maximum Ratings
Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0 V, IF = 6.5 A, IS = 1.3 A
(Note 2)
0.73 15 5
1.3
V nS nC
diF/dt = 100 A/s
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
a) 78/W when mounted on a 0.5in2 pad of 2 oz copper
b) 125/W when mounted on a 0.02 in2 pad of 2 oz copper
c) 135/W when mounted on a minimum pad.
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%
FDS9926A Rev E (W)
FDS9926A
Typical Characteristics
20
2.4
VGS = 4.5V 2.5V
VGS = 2.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.2 2 1.8 1.6 1.4 1.2 1 0.8 2.5V 3.0V 3.5V 4.0V 4.5V
16 ID, DRAIN CURRENT (A)
3.5
12
3.0V
8
2.0V
4
0 0 0.5 1 1.5 VDS, DRAIN TO SOURCE VOLTAGE (V) 2
0
5
10 ID, DIRAIN CURRENT (A)
15
20
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.11
1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
RDS(ON), ON-RESISTANCE (OHM)
ID = 6.5A VGS = 4.5V
ID = 3.25A
0.09
1.4
1.2
0.07
TA = 125 C
0.05
o
1
0.8
0.03
TA = 25oC
0.01
0.6 -50 -25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 150
1
2
3
4
5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with Temperature.
20
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100
TA = -55 C
125 C
ID, DRAIN CURRENT (A) 15
o
IS, REVERSE DRAIN CURRENT (A)
VDS = 5V
o
VGS = 0V 10 TA = 125 C 1 25oC 0.1 -55 C 0.01 0.001 0.0001
o o
25oC
10
5
0 1 1.5 2 2.5 VGS, GATE TO SOURCE VOLTAGE (V) 3
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDS9926A Rev E (W)
FDS9926A
Typical Characteristics
5 VGS, GATE-SOURCE VOLTAGE (V) ID = 3 A 4 VDS = 5V 10V 3 15V
1000
f = 1 MHz VGS = 0 V
800 CAPACITANCE (pF)
600
Ciss
400
2
Coss
200
1
Crss
0 0 1 2 3 4 5 6 7 8 Qg, GATE CHARGE (nC)
0 0 5 10 15 VDS, DRAIN TO SOURCE VOLTAGE (V) 20
Figure 7. Gate Charge Characteristics.
100 P(pk), PEAK TRANSIENT POWER (W) 50
Figure 8. Capacitance Characteristics.
ID, DRAIN CURRENT (A)
RDS(ON) LIMIT 10
100s 1ms 10ms 100ms 1s 10s DC
40
SINGLE PULSE RJA = 135C/W TA = 25C
30
1 VGS = 4.5V SINGLE PULSE RJA = 135oC/W TA = 25oC 0.01 0.01 0.1
20
0.1
10
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
0 0.001
0.01
0.1 1 t1, TIME (sec)
10
100
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
D = 0.5
RJA(t) = r(t) * RJA
0.2
RJA = 135 C/W P(pk) t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2
o
0.1
0.1 0.05 0.02 0.01
0.01
SINGLE PULSE
0.001 0.0001
0.001
0.01
0.1
t1, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design.
FDS9926A Rev E (W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
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DISCLAIMER
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I5

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